HSMP-386D
PIN Diode Diversity Switch
Data Sheet
Description
The HSMP-386D is a low cost and high linearity diversity
switch designed to operate from 50MHz to 6GHz.
HSMP-386D is built with unique 4 PIN diode configuration,
and it is housed in a industrial standard low cost miniature
SOT-143 package, which will allow board space saving for
space constraint application.
HSMP-386D is equipped with -0.35dB IL and -25.40dB
ISO @ 900MHz. On the other hand, HSMP-386D is also
featuring with 56.83dBm IIP3 and 47.41dBm IP1dB per-
formance @ 900MHz. HSMP-386D is suitable for wireless
application that required low distortion diversity switch,
such as dect phone, wireless LAN and WiMAX.
Pin Connections and Package Marking, SOT-143
Notes:
L7 = Device Code
? = Month code indicates the month of manufacture
Features
• Unique configurations in Surface Mount SOT-143
– Increase Flexibility
– Save Board Space
– Reduce Cost
• Switching
– Low Distortion Switching
– Low Capacitance
• Low Failure In Time (FIT) Rate
[1]
• Specifications at 900MHz; IF=10mA (Typ.)
– Low IL, 0.35dB
– High ISO, 25.40dB
– High power handling, IP1dB, 47.41dBm
– High Linearity, IIP3, 56.83dBm
L7?
1
3
2
4
2
Table 1. Absolute Maximum Rating
[1]
Tc = +25°C
Symbol Parameter Units Absolute Max.
I
F
Forward Current (1µs Pulse)
Amp 1
P
IV
Peak Inverse Voltage V 50
T
J
Junction temperature °C 150
T
STG
Storage Temperature °C -65 to 150
θ
JC
Thermal Resistance
[2]
°C/W 500
Notes:
1. Operation in excess of anyone of these conditions may result in permanent damage to the device.
2. T
C
= 25°C, T
C
where is defined to be the temperature at the package pins where contacts is made to the circuit board.
Table 2. Electrical Specifications, Tc = +25°C, each diode
Symbol Parameter and Test Condition Units Min. Typ Max.
V
BR
Breakdown Voltage @ I
R
= 10µA
V – 55 –
V
F
Forward Voltage @ I
F
= 30mA V – 0.88 –
V
F
Forward Voltage @ I
F
=100mA V – 0.96 1.15
R
S
Typical Series Resistance @ Freq = 100MHz & I
F
=1mA Ohm – 17.0 –
R
S
Typical Series Resistance @ Freq = 100MHz & I
F
=10mA Ohm – 2.6 –
R
S
Typical Series Resistance @ Freq = 100MHz & I
F
=100mA Ohm – 1.2 –
C
T
Typical Total Capacitance @ Freq = 1MHz & V
R
= 0V pF – 0.35 0.55
T Carrier Lifetime @ I
F
= 50mA & I
R
=250mA ns – 500 –
T
rr
Reverse Recovery Time @ V
R
=10V, I
F
= 20mA & 90% Recovery ns – 75 –
Table 3. Performance Table at Nominal Operating Conditions, Tc = +25°C, IF = 10mA, each diode
IIP3
[1, 4]
Input 3rd order Intercept Point @ freq = 0.9GHz dBm – 56.83 –
IIP3
[2, 4]
Input 3rd order Intercept Point @ freq = 1.9GHz dBm – 57.93 –
IIP3
[3, 4]
Input 3rd order Intercept Point @ freq = 2.4GHz dBm – 59.26 –
IP1dB
[4]
Input 1dB Compressed Power @ freq = 0.9GHz dBm – 47.41 –
IP1dB
[4]
Input 1dB Compressed Power @ freq = 1.9GHz dBm – 48.11 –
IP1dB
[4]
Input 1dB Compressed Power @ freq = 2.4GHz dBm – 48.45 –
Notes:
1. 0.9 GHz OIP3 Test Condition : F1 = 0.9 GHz & F2 = 0.905 GHz, Pin =30 dBm
2. 1.9 GHz OIP3 Test Condition : F1 = 1.9 GHz & F2 = 1.905 GHz, Pin =30 dBm
3. 2.4 GHz OIP3 Test Condition : F1 = 2.4 GHz & F2 = 2.405 GHz, Pin =30 dBm
4. Measurement obtained using the demoboard described in Figure 7 & 8.