Symbol Parameter
Rating
Units
10s Steady State
V
DS
Drain-Source Voltage
-20
V
V
GS
Gate-Source Voltage
±12
V
I
D
@T
C
=25℃
Continuous Drain Current, V
GS
@ -10V
1
-50
A
I
D
@T
C
=100℃
Continuous Drain Current, V
GS
@ -10V
1
-22
A
I
D
@T
A
=25℃
Continuous Drain Current, V
GS
@ -10V
1
-13.5 -10
A
I
D
@T
A
=70℃
Continuous Drain Current, V
GS
@ -10V
1
-10.5 -8.0
A
I
DM
Pulsed Drain Current
2
-70
A
EAS Single Pulse Avalanche Energy
3
36
mJ
I
AS
Avalanche Current
-12
A
P
D
@T
C
=25℃
Total Power Dissipation
4
31.25
W
P
D
@T
A
=25℃
Total Power Dissipation
4
3.1 2.0
W
T
STG
Storage Temperature Range -55 to 150
℃
T
J
Operating Junction Temperature Range -55 to 150
℃
Symbol Parameter Typ. Max. Unit
R
θJA
Thermal Resistance Junction-Ambient
1
---
80
℃/W
R
θJA
Thermal Resistance Junction-Ambient
1
(t ≤10s)
---
40
℃/W
R
θJC
Thermal Resistance Junction-Case
1
---
4.0
℃/W
BVDSS RDSON ID
-20V 9.0mΩ -50A
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
General Description
Features
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Absolute Maximum Ratings
Thermal Data
DFN3.3x3.3A-8_EP Pin Configuration
Product Summery
The WSD20L50DN is the highest performance
trench P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
The WSD20L50DN meet the RoHS and
Green Product requirement 100% EAS
guaranteed with full function reliability
approved.
WSD20L50DN
Page
1www.winsok.tw
Dec.2014
P-Ch MOSFET
Symbol Parameter Conditions Min. Typ. Max. Unit
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V , I
D
=-250uA
-20
--- --- V
△BV
DSS
/△T
J
BVDSS Temperature Coefficient
Reference to 25℃ , I
D
=-1mA
--- -0.0232 ---
V/℃
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-4.5V , I
D
=-10A
---
9
11
mΩ
V
GS
=-2.5V , I
D
=-8A
---
11
15
V
GS(th)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=-250uA
-0.5 --- -1.0
V
△V
GS(th)
V
GS(th)
Temperature Coefficient --- 4.6 ---
mV/℃
I
DSS
Drain-Source Leakage Current
V
DS
=-16V , V
GS
=0V , T
J
=25℃
--- --- -1
uA
V
DS
=-16V , V
GS
=0V , T
J
=55℃
--- --- -5
I
GSS
Gate-Source Leakage Current
V
GS
=±12V , V
DS
=0V
--- ---
±100
nA
gfs Forward Transconductance
V
DS
=-5V , I
D
=-10A
---
13
--- S
R
g
Gate Resistance V
DS
=0V , V
GS
=0V , f=1MHz ---
9 ---
Ω
Q
g
Total Gate Charge (-4.5V)
V
DS
=-10V , V
GS
=-4.5V , I
D
=-11A
---
25
---
nC
Q
gs
Gate-Source Charge ---
1.6
---
Q
gd
Gate-Drain Charge ---
11
---
T
d(on)
Turn-On Delay Time
V
DD
=-10V , V
GS
=-4.5V ,
R
G
=6Ω I
D
=-1A ,RL=15Ω
---
9 ---
ns
T
r
Rise Time ---
13 ---
T
d(off)
Turn-Off Delay Time ---
26 ---
T
f
Fall Time ---
167 ---
C
iss
Input Capacitance
V
DS
=-10V , V
GS
=0V , f=1MHz
---
1620 ---
pF
C
oss
Output Capacitance ---
320 ---
C
rss
Reverse Transfer Capacitance ---
290 ---
Symbol Parameter Conditions Min. Typ. Max. Unit
I
S
Continuous Source Current
1,6
V
G
=V
D
=0V , Force Current
--- ---
-10
A
I
SM
Pulsed Source Current
2,6
--- ---
-40
A
V
SD
Diode Forward Voltage
2
V
GS
=0V , I
S
=-1A , T
J
=25℃
--- --- -1 V
t
rr
Reverse Recovery Time
IF=-20A,dI/dt=100A/µs, T
J
=25℃
63
--- nS
Q
rr
Reverse Recovery Charge ---
54
--- nC
Note :
1.
The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper,t≦10sec.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.
The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.5mH,I
AS
=-18A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Diode Characteristics
Electrical Characteristics (T
J
=25 ℃, unless otherwise noted)
WSD20L50DN
Page 2
www.winsok.tw
Dec.2014
----
P-Ch MOSFET