Symbol Parameter Rating Units
V
DS
Drain-Source Voltage 20 V
V
GS
Gate-Source Voltage
±12
V
I
D
@T
A
=25℃
Continuous Drain Current, V
GS
@ 4.5V
1
7.5
A
I
D
@T
A
=70℃
Continuous Drain Current, V
GS
@ 4.5V
1
6.5
A
I
DM
Pulsed Drain Current
2
30
A
P
D
@T
A
=25℃
Total Power Dissipation
3
1.5
W
P
D
@T
A
=70℃
Total Power Dissipation
3
1.0 W
T
STG
Storage Temperature Range -55 to 150
℃
T
J
Operating Junction Temperature Range -55 to 150
℃
Symbol Parameter Typ. Max. Unit
R
θJA
Thermal Resistance Junction-ambient
1
(Steady State) ---
120
℃/W
R
θJA
Thermal Resistance Junction-ambient
1
(t<10S) ---
83
℃/W
BV
DSS
R
DSON
I
D
20V
15.5mΩ
7.5A
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
General Description
Features
Applications
z Power Management in Notebook Computer, Portable
Equipment and Battery Powered Systems.
z DC-DC Power System
z ESD:2KV
Absolute Maximum Ratings
Thermal Data
DFN2X3A_EP Pin Configuration
Product Summery
WSD2068
Page
1www.winsok.tw
Dec.2014
The WSD2068 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate
charge for most of the small power switching
and load switch applications.
The WSD2068 meet the RoHS and Green
Product requirement with full function
reliability approved.
Dual N-Ch MOSFET
Symbol Parameter Conditions Min. Typ. Max. Unit
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V , I
D
=250uA 20 --- --- V
△BV
DSS
/△T
J
BVDSS Temperature Coefficient
Reference to 25℃ , I
D
=1mA
--- 0.022 ---
V/℃
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V , I
D
=5.5A ---
mΩ
V
GS
=2.5V , I
D
=5.5A
---
V
GS(th)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=250uA
0.3
0.7
1.0
V
△V
GS(th)
V
GS(th)
Temperature Coefficient --- -2.32 ---
mV/℃
I
DSS
Drain-Source Leakage Current
V
DS
=16V , V
GS
=0V , T
J
=25℃
--- --- 1
uA
V
DS
=16V , V
GS
=0V , T
J
=55℃
--- --- 5
I
GSS
Gate-Source Leakage Current
V
GS
=±12V , V
DS
=0V
--- ---
±100
nA
gfs Forward Transconductance V
DS
=5V , I
D
=10A ---
20
--- S
R
g
Gate Resistance V
DS
=0V , V
GS
=0V , f=1MHz ---
11
---
Ω
Q
g
Total Gate Charge (4.5V)
V
DS
=10V , V
GS
=4.5V , I
D
=5A
--- 15 20
nC
Q
gs
Gate-Source Charge ---
2.2 ---
Q
gd
Gate-Drain Charge ---
4.2
---
T
d(on)
Turn-On Delay Time
V
DS
=10V , V
GS
=10V , R
G
=6Ω,
I
D
=5A ,RL=2Ω
---
148
---
ns
T
r
Rise Time ---
277
---
T
d(off)
Turn-Off Delay Time ---
1616
---
T
f
Fall Time ---
751
---
C
iss
Input Capacitance
V
DS
=10V , V
GS
=0V , f=1MHz
---
1219
pF
C
oss
Output Capacitance
---
150
---
C
rss
Reverse Transfer Capacitance
--- 123
---
Symbol Parameter Conditions Min. Typ. Max. Unit
I
S
Continuous Source Current
1,4
V
G
=V
D
=0V , Force Current
---
---
5
A
I
SM
Pulsed Source Current
2,4
--- ---
15
A
V
SD
Diode Forward Voltage
2
V
GS
=0V , I
S
=1A , T
J
=25℃
---
0.76 1.3
V
t
rr
Reverse Recovery Time
IF=5A,dI/dt=100A/µs , T
J
=25℃
---
245
--- nS
Q
rr
Reverse Recovery Charge ---
1105
--- nC
Note :
1.
The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper, t<10sec.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Electrical Characteristics (T
J
=25 ℃, unless otherwise noted)
Diode Characteristics
12
15.5
20
16
WSD2068
Page 2
www.winsok.tw
Dec.2014
Dual N-Ch MOSFET
---