AiT Semiconductor Inc.
www.ait-ic.com
POWER INDUCTOR
PIE
●FEATURE
1. Multilayer Chip Power Inductor
2. Monolithic structure for high reliability
3. Excellent solderability and high heat resistance
4. No cross coupling due to magnetic shield
5. High DC bias current due to developed material
6. Low DC resistance
7. Operating Temp.: -40°C~+125°C
●
APPLICATION
1. DC-DC converter circuits for mobile phones, wearable devices, DVCs,
HDDs, etc.
●
ORDERING INFORMATION
PIE2012
-2R2
T
PN
Inductance
M:±20%
●
SHAPE AND DIMENSION
Unit: mm [inch]
Type
L
W
T
a
PIE2012
[0805]
2.0 (+0.3, -0.1)
[.079 (+.012, -.004)]
1.25±0.2
[.049±.008]
0.85±0.2
[.033±.008]
0.5±0.3
[.020±.012]
PIE2016
[0806]
2.0 (+0.3, -0.1)
[.079 (+.012, -.004)]
1.6±0.2
[.063±.008]
0.9±0.1
[.035±.004]
0.5±0.3
[.020±.012]
PIE2520
[1008]
2.5±0.2
[.098±.008]
2.0(+0.3, -0.1)
[.079(+.012, -.004)]
0.9±0.1
[.035±.004]
0.5±0.3
[.020±.012]
AiT Semiconductor Inc.
www.ait-ic.com
POWER INDUCTOR
PIE
●
ELECTRICAL CHARACTERISTICS
PIE2012 TYPE
Part
Number
Inductance
Test Freq.
DC
Resistance
Self-resonant
Frequency
Min.
Saturation
Current
Typ.
Heat Rating
Current
Max.
Symbol
L
f
DCR
SRF
Isat
Irms
Units
μH
MHz
Ω
MHz
mA
mA
PIE2012-2R2M
2.2
1
0.18±25%
50
300
1300
PIE2012-4R7M
4.7
1
0.30±25%
60
180
850
PIE2016 TYPE
Part
Number
Inductance
Test Freq.
DC
Resistance
Self-resonant
Frequency
Min.
Saturation
Current
Typ.
Heat Rating
Current
Max.
Symbol
L
f
DCR
SRF
Isat
Irms
Units
μH
MHz
Ω
MHz
mA
mA
PIE2016-1R0M
1.0
1
0.14±25%
120
900
1100
PIE2016-2R2M
2.2
1
0.22±25%
70
600
850
PIE2520 TYPE
Part
Number
Inductance
Test Freq.
DC
Resistance
Self-resonant
Frequency
Min.
Saturation
Current
Typ.
Heat Rating
Current
Max.
Symbol
L
f
DCR
SRF
Isat
Irms
Units
μH
MHz
Ω
MHz
mA
mA
PIE2520-2R2M
2.2
1
0.13±25%
70
500
1400
PIE2520-4R7M
4.7
1
0.28±25%
45
250
950
※Rated current: Isat or Irms, whichever is smaller;
※Isat: DC current at which the inductance drops approximate 30% from its value without current;
※Irms: DC current that causes the temperature rise (ΔT =40°C) from 20°C ambient.