© Semiconductor Components Industries, LLC, 2017
December, 2018 − Rev. 1
1 Publication Order Number:
NSVS50030SB3/D
NSVS50030SB3,
NSVS50031SB3
Bipolar Transistor (-)50 V,
(-)3 A, Low V
CE
(sat),
(PNP)NPN Single
This device is bipolar junction transistor featuring high current, low
saturation voltage, and high speed switching.
Suitable for motor driver, relay driver, DC−DC converter of
automotive applications. AEC−Q101qualified and PPAP capable.
Features
• Large Current Capacitance
• Low Collector to Emitter Saturation Voltage
• High−Speed Switching
• High Allowable Power Dissipation
• AEC−Q101Qualified and PPAP Capable
• Pb−Free, Halogen Free and RoHS Compliance
• Ultra Small Package Facilitates Miniaturization in End Products
(Mounting Height: 0.9 mm)
Typical Applications
• DC / DC Converter
• Relay Drivers, Lamp Drivers, Motor Drivers
• Flash
Specifications
ABSOLUTE MAXIMUM RATINGS at T
A
= 25°C
Parameter
Symbol Value Unit
Collector to Base Voltage V
CBO
(−50) 100 V
Collector to Emitter Voltage V
CES
(−50) 100 V
Collector to Emitter Voltage V
CEO
(−)50 V
Emitter to Base Voltage V
EBO
(−)6 V
Collector Current
I
C
(−)3 A
Collector Current (Pulse) I
CP
(−)6 A
Base Current I
B
(−)600 mA
Collector Dissipation (Note 1) P
C
1.1 W
Junction Temperature Tj 175
_C
Storage Temperature Tstg −55 to +175
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on ceramic substrate. (600 mm
2
x 0.8 mm)
CPH3
CASE 318BA
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
www.onsemi.com
MARKING DIAGRAMS
ELECTRICAL CONNECTION
3
2
1
3
2
1
NSVS50030SB3 NSVS50031SB3
3
2
1
XXXM
XXX = HAE: NSVS50030SB3
= HCE: NSVS50031SB3
M = Single Digit Date Code
NSVS50030SB3, NSVS50031SB3
www.onsemi.com
2
ORDERING INFORMATION
Device Marking Package Shipping (Qty / Packing) †
NSVS50030SB3T1G HAE
CPH3
(Pb−Free / Halogen Free)
3,000/ Tape & Reel
NSVS50031SBST1G HCE
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Parameter
Symbol Conditions
Value
Unit
Min Typ Max
Collector Cutoff Current I
CBO
V
CB
= (−)40 V, I
E
= 0 A (−)1
μA
Emitter Cutoff Current I
EBO
V
EB
= (−)4 V, I
C
= 0 A (−)1
μA
DC Current Gain h
FE
V
CE
= (−)2 V,
I
C
= (−)100 mA
200 560
Gain−Bandwidth Product f
T
V
CE
= (−)10 V,
I
C
= (−)500 mA
(360) 380 MHz
Output Capacitance Cob V
CB
= (−)10 V,
f = 1 MHz
(24) 13 pF
Collector to Emitter Saturation Voltage V
CE
(sat)
I
C
= (−)1 A,
I
B
= (−)50 mA
(−100) 80 (−200) 120 mV
I
C
= (−)2 A,
I
B
= (−)100 mA
(−185) 140 (−500) 210 mV
Base to Emitter Saturation Voltage V
BE
(sat) I
C
= (−)2 A,
I
B
= (−)100 mA
(−)0.88 (−)1.2 V
Collector to Base Breakdown Voltage V
(BR)CBO
I
C
= (−)10 mA, I
E
= 0 A
(−50) 100 V
Collector to Emitter Breakdown Voltage V
(BR)CES
I
C
= (−)100 mA,
R
BE
= 0 W
(−50) 100 V
Collector to Emitter Breakdown Voltage V
(BR)CEO
I
C
= (−)1 mA, R
BE
= ∞ (−)50 V
Emitter to Base Breakdown Voltage V
(BR)EBO
I
E
= (−)10 mA,
I
C
= 0 A
(−)6 V
Turn−On Time t
on
See Fig.1
(30) 35 ns
Storage Time t
stg
(230) 300 ns
Fall Time t
f
(15) 22 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Figure 1. Switching Time Test Circuit
+
+
50 W
INPUT
OUTPUT
V
R
R
B
R
L
100 mF 470 mF
PW=20 ms
I
B1
I
B2
DC ≤ 1%
+
+
50 W
INPUT
OUTPUT
V
R
R
B
R
L
PW=20 ms
I
B1
I
B2
DC ≤ 1%
NSVS50030SB3
NSVS50031SB3
10I
B1
= −10I
B2
= I
C
= 1 A
10I
B1
= −10I
B2
= I
C
= −1 A
V
BE
= 5 V V
CC
= −25 V
V
BE
= −5 V V
CC
= 25 V
100 mF 470 mF