CS20J65 AN
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2017V01
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Silicon N-Channel Power MOSFET
General Description：
CS20J65 AN, the silicon N-channel Enhanced MOSFETs, is
obtained by the super junction technology which reduces the
conduction loss, improve switching performance and enhance the
avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency.
The package type is TO-3P（N）, which accords with the RoHS
standard.
Features：
l Fast Switching
l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol
Parameter
Rating Units
V
DSS
Drain-to-Source Voltage
650
V
I
D
Continuous Drain Current
20
A
I
DM
a
1
Pulsed Drain Current
60
A
V
GS
Gate-to-Source Voltage
±30
V
E
AS
a
2
Single Pulse Avalanche Energy
180
mJ
dv/dt
a
3
Peak Diode Recovery dv/dt
5.0
V/ns
P
D
Power Dissipation
180
W
T
J
，T
stg
Operating Junction and Storage Temperature Range
–55…+150
℃
V
DSS
650 V
I
D
20 A
P
D
(T
C
=25℃)
180 W
R
DS(ON)max
0.18 Ω
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10 2017V01
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CS20J65 AN
Electrical Characteristics（Tc= 25 ℃ unless otherwise specified）：
OFF Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
V
DSS
Drain to Source Breakdown Voltage
V
GS
=0V, I
D
=250µA
650
-- --
V
ΔBV
DSS
/ΔT
J
Bvdss Temperature Coefficient
ID=250uA,Reference25 ℃
-- 0.67
--
V/℃
I
DSS
Drain to Source Leakage Current
V
DS
= 650V, V
GS
= 0V,
T
a
= 25℃
-- -- 1
µA
V
DS
=
52
0
V, V
GS
= 0V
,
T
a
= 125℃
-- --
100
I
GSS(F)
Gate to Source Forward Leakage
V
GS
=+30V
-- -- 100
nA
I
GSS(R)
Gate to Source Reverse Leakage
V
GS
=-30V
-- -- -100
nA
ON Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
R
DS(ON)
Drain-to-Source On-Resistance
V
GS
=10V,I
D
=10A
-- 0.14
0.18
Ω
V
GS(TH)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
2.5 4 V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ. Max
g
fs
Forward Transconductance
V
DS
=10V, I
D
=20A
-- 22.1
-- S
C
iss
Input Capacitance
V
GS
= 0V V
DS
= 50V
f = 1.0MHz
-- 2005
--
pF C
oss
Output Capacitance
-- 115 --
C
rss
Reverse Transfer Capacitance
-- 3.3 --
Resistive Switching Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
t
d(ON)
Turn-on Delay Time
I
D
= 20 A V
DD
= 300V
R
G
=25Ω
-- 38 104
ns
tr
Rise Time
-- 72 220
t
d(OFF)
Turn-Off Delay Time
-- 131
360
t
f
Fall Time
-- 50 108
Q
g
Total Gate Charge
I
D
= 20A V
DD
=520V
V
GS
= 10V
-- 41 --
nC Q
gs
Gate to Source Charge
-- 9.9 --
Q
gd
Gate to Drain (“Miller”)Charge
-- 16 --