CS10N50 A8R
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2015V01
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R
Silicon N-Channel Power MOSFET
General Description:
CS10N50 A8R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance
(Rdso
n≤0.75Ω)
l Low Gate Charge (Typical Data:32nC)
l Low Reverse transfer capacitances (Typical:8.4pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol
Parameter
Rating Units
V
DSS
Drain-to-Source Voltage
500
V
I
D
Continuous Drain Current
10
A
Continuous Drain Current T
C
= 100 °C
6.3
A
I
DM
Pulsed Drain Current
40
A
V
GS
Gate-to-Source Voltage
±30
V
E
AS
Single Pulse Avalanche Energy
580
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
P
D
Power Dissipation
130
W
Derating Factor above 25°C
1.04
W/℃
T
J
,T
stg
Operating Junction and Storage Temperature Range
150,–55 to 150
℃
T
L
Maximum Temperature for Soldering
300
℃
V
DSS
500 V
I
D
10 A
P
D
(T
C
=25℃)
130 W
R
DS(ON)Typ
0.5 Ω