CS20N65F A9R
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2017V01
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General Description:
CS20N65F A9R the silicon N-channel Enhanced
VDMOSFET, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance
(Rdso
n≤0.50Ω)
l Low Gate Charge (Typical Data:58nC)
l Low Reverse transfer capacitances (Typical:20pF)
l 100% Single Pulse avalanche energy Test
l Halogen Free
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol
Parameter
Rating Units
V
DSS
Drain-to-Source Voltage
650
V
I
D
Continuous Drain Current
20
A
Continuous Drain Current T
C
= 100 °C
12.5
A
I
DM
Pulsed Drain Current
80
A
V
GS
Gate-to-Source Voltage
±30
V
E
AS
Single Pulse Avalanche Energy
1200
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
P
D
Power Dissipation
45
W
Derating Factor above 25°C
0.36
W/℃
T
J
,T
stg
Operating Junction and Storage Temperature Range
150,–55 to 150 ℃
T
L
Maximum Temperature for Soldering
300
℃
V
DSS
650 V
I
D
20 A
P
D
(T
C
=25℃)
45 W
R
DS(ON)Typ
0.42 Ω