CS45N06 A3
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 7 2018V01
○
R
S
ilicon
N
-
Channel Power MOSFET
General Description：
CS45N06 A3, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-251, which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(
Rdso
n≤16
m
Ω)
l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger;
LED backlight driver;
Synchronous rectification
Absolute（Tj= 25℃ unless otherwise specified ）
Symbol
Parameter
Rating Units
V
DSS
Drain-to-Source Voltage
60
V
I
D
Continuous Drain Current TC= 25 ℃
45
A
Continuous Drain Current T
C
= 100 °C
30
A
I
DM
a
1
Pulsed Drain Current TC= 25℃
180
A
V
GS
Gate-to-Source Voltage
±20
V
E
AS
a
2
Avalanche Energy
121
mJ
P
D
Power Dissipation T
C
= 25 °C
54.3
W
Derating Factor above 25°C
0.43
W/℃
T
J
，T
stg
Operating Junction and Storage Temperature Range
150，–55 to 150
℃
T
L
MaximumTemperature for Soldering
300
℃
V
DSS
60 V
I
D
45 A
R
DS(ON)Typ
12 mΩ
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 7 2018V01
○
R
CS45N06 A3
Electrical Characteristics（Tj= 25 ℃unless otherwise specified）：
OFF Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
V
DSS
Drain to Source Breakdown Voltage
V
GS
=0V, I
D
=250µA
60 -- --
V
I
DSS
Drain to Source Leakage Current
V
DS
=60V, V
GS
= 0V,
T
j
= 25℃
-- -- 1
µA
V
DS
=48V, V
GS
= 0V,
T
j
= 125℃
-- -- 100
I
GSS(F)
Gate to Source Forward Leakage
V
GS
=20V
-- -- 100
nA
I
GSS(R)
Gate to Source Reverse Leakage
V
GS
=-20V
-- -- -100
nA
ON Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
R
DS(ON)
Drain-to-Source On-Resistance
V
GS
=10V,I
D
=20A
-- 12 16 mΩ
V
GS
=4.5V,I
D
=15A
-- 15 20 mΩ
V
GS(TH)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
1.0 1.5
2.0 V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
R
g
Gate resistance
f=1MHz
-- 3.2 -- Ω
C
iss
Input Capacitance
V
GS
= 0V V
DS
=30V
f = 1.0MHz
--
1876
--
pF C
oss
Output Capacitance
--
135
--
C
rss
Reverse Transfer Capacitance
--
102
--
Resistive Switching Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
t
d(ON)
Turn-on Delay Time
V
GS
=10V，R
G
=3Ω
V
DD
=30V，I
D
=20A
-- 13.1
--
ns
tr
Rise Time
-- 25.1
--
t
d(OFF)
Turn-Off Delay Time
-- 60.8
--
t
f
Fall Time
-- 9.2 --
Q
g
Total Gate Charge
I
D
=20A V
DD
=30V
V
GS
= 10V
-- 43.45
--
nC Q
gs
Gate to Source Charge
-- 5.7 --
Q
gd
Gate to Drain (“Miller”)Charge
-- 11.9
--