©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/05/19
SiC MOSFET
LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L
RoHS
LSIC1MO120E0160 1200 V N-channel, Enhancement-mode SiC MOSFET
Features
Applications
• Optimized for high-
frequency, high-efficiency
applications
• Extremely low gate
charge and output
capacitance
• Low gate resistance for
high-frequency switching
• Normally-off operation at
all temperatures
• Ultra-low on-resistance
• Halogen-free, RoHS
compliant and lead-free
• High-frequency
applications
• Solar Inverters
• Switch Mode Power
Supplies
• UPS
• Motor Drives
• High Voltage DC/DC
Converters
• Battery Chargers
• Induction Heating
Circuit Diagram TO-247-3L
21 3
*
* Body
diode
Product Summary
Characteristics Value Unit
V
DS
1200 V
Typical R
DS(ON)
160 mΩ
I
D
( T
C
≤ 100 °C)
14 A
• Littelfuse “RoHS” logo =
RoHS conform
• Littelfuse “HF” logo =
Halogen Free
• Littelfuse “Pb-free” logo
= Pb-free lead plating
Environmental
RoHS
Pb
Pb
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/05/19
SiC MOSFET
LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L
Thermal Characteristics
Maximum Ratings
Characteristics Symbol Conditions Value Unit
Continuous Drain Current
I
D
V
GS
= 20 V, T
C
= 25 °C
22
A
V
GS
= 20 V, T
C
= 100 °C
14
Pulsed Drain Current
1
I
D(pulse)
T
C
= 25 °C
44 A
Power Dissipation
P
D
T
C
= 25 °C, T
J
= 150 °C
125 W
Operating Junction Temperature
T
J
-55 to 150 °C
Gate-source Voltage
V
GS,MAX
Absolute maximum values
-6 to 22
V
V
GS,OP,TR
Transient, <1% duty cycle
-10 to 25
V
GS,OP
Recommended DC
operating values
-5 to 20
Storage Temperature
T
STG
-
-55 to 150 °C
Lead Temperature for Soldering
T
sold
-
260 °C
Mounting Torque
M
D
M3 or 6-32 screw
0.6 Nm
5.3 in-lb
Footnote 1: Pulse width limited by T
J,max
Characteristics Symbol Value Unit
Maximum Thermal Resistance, junction-to-case
R
th,JC,max
1.0 °C/W
Maximum Thermal Resistance, junction-to-ambient
R
th,JA,max
40 °C/W
Electrical Characteristics (T
J
= 25 °C unless otherwise specified)
Characteristics Symbol Conditions Min Ty p Max Unit
Static Characteristics
Drain-source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 μA
1200 - - V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 1200 V, V
GS
= 0 V
- 1 100
μA
V
DS
= 1200 V, V
GS
= 0 V, T
J
= 150 °C
- 2 -
Gate Leakage Current
I
GSS,F
V
GS
= 22 V, V
DS
= 0 V
- - 100
nA
I
GSS,R
V
GS
= -6 V, V
DS
= 0 V
- - 100
Drain-source On-state Resistance
R
DS(ON)
I
D
= 10 A, V
GS
= 20 V
- 160 200
mΩ
I
D
= 10 A, V
GS
= 20 V, T
J
= 150 °C
- 210 -
Gate Threshold Voltage
V
GS,(th)
V
DS
= V
GS
, I
D
= 5 mA
1.8 2.8 4.0
V
V
DS
= V
GS
, I
D
= 5 mA, T
J
= 150 °C
- 1.9 -
Gate Resistance
R
G
Resonance method, Drain-Source
shorted
- 0.95 - Ω