i,

U

na.

20

STERN

AVE.

SPRINGFIELD,

NEW

JERSEY

07081

U.SA

TELEPHONE:

(973)

379-2922

(212)

227-6006

FAX:

(973)

376-8800

Schottky

Barrier

Diodes

for

General

Purpose

Applications

Technical Data

1N5711

1N5712

5082-2300

Series

5082-2800

Series

5082-2900

Features

• Low

Turn-On

Voltage

As Low as

0.34

V at 1

mA

•

Pico

Second

Switching

Speed

•

High

Breakdown

Voltage

Up to 70 V

•

Matched

Characteristics

Available

Description/Applications

The

1N5711,1N5712,

5082

2800/

10/11

are

passivated

Schottky

barrier

diodes

which

use a

patented "guard ring"

design

to

achieve

a

high breakdown

voltage.

Packaged

in a low

cost

glass

package, they

are

well suited

for

high level detecting, mixing,

switching,

gating,

log or A-D

converting,

video

detecting,

frequency

discriminating,

sampling,

and

wave shaping.

The

5082

2835

is a

passivated

Schottky

diode

in a low

cost

glass

package.

It

is

optimized

for low

turn-on

voltage.

The

5082

2835

is

particularly

well suited

for the

UHF

mixing

needs

of the

CATV

marketplace.

The

5082-2300

Series

and

5082-2900

devices

are

unpas

sivated Schottky

diodes

in a

glass

package.

These

diodes

have

extremely

low

1/f

noise

and are

ideal

for low

noise

mixing,

and

high

sensitivity

detecting.

They

are

particularly well suited

for use

in

Doppler

or

narrow band video

receivers.

Outline

15

0.41

(.016)

0.36

j.014|

'

1.93 (.07$)

29.4(1.00)

1.73

CATHODE

4.M

(.170)

3.81

(.160)

25.4(1.00)

MIN.

DIMENSIONS

IN

MILLIMCTERS

AND

(INCHES).

Maximum

Ratings

Junction Operating

and

Storage Temperature Range

5082-2303,-2900

<50°C

to

+100°0

1N5711.1N5712,

50822800/10/11

65°C

to+200°C

50822835

-GO°C

to

+150°C

DC

Power Dissipation

(Measured

in an

infinite heat

sink

at

TCASE

=

25°C)

Derate

linearly

to

zero

at

maximum

rated temperature

5082-2303,

2900

100 mW

1N5711,1N5712,

5082-2800/10/11

250

mW

50822835

150

mW

Peak

Inverse

Voltage

VBR

NJ

Semi-Conductors

reserves

the

right

to

change

test

conditions,

parameter

limits

and

package

dimensions

without

notice.

Information

furnished

by

NJ

Semi-Cnnducliirs

is

believed

to be

both

accurate

and

reliable

at the

lime

or'going

to

press.

However

NJ

"xmi-Conductors

assumes

no

responsibility

for

an>

errors

or

omissions

discovered

in its

use.

NJ

Semi-Conductors

encourages

tibtomers

lo

vcrit'v

that

tlmasheets

lire

current

before

placing

orders.

Package

Characteristics

°

Outline

15

Lead

Material

Dumet

Lead

Finish

95-5%

Tin-Lead

Max.

Soldering Temperature

260CC

for

5

sec

Min.

Lead

Strength

4

pounds

pull

Typical

Package Inductance

1N5711.1N5712:

2.0

nH

2800

Series:

2.0

nH

2300

Series,

2900:

3.0 nH

Typical

Package Capacitance

'1N5711.1N5712:

0,2

ph

2800

Series:

0.2

PF

2300

Series,

2900:

0.07

pF

The

leads

on the

Outline

15

package should

be

restricted

so

that

the

bend

starts

at

least

1/16

inch

from

the

glass

body.

Outline

15

diodes

are

available

on

tape

and

reel.

The

tape

and

reel

specification

is

patterned

after

RS-296

D.

Electrical

Specifications

at

TA

-

25°C

General

Purpose

Diodes

Part

Number

5082-2800

1N5711

50822810

1N5712

5082-2811

5082-2835

Test

Conditions

Package

Outline

15

15

15

15

15

15

Min.

Breakdown

Voltage

VBR(V)

70

70

20

20

15

8*

!R

=

10nA

*IR

=

100|iA

Max.

Forward

Voltage

VF

(mV)

410

410

410

550

410

340

IF

=

1

mA

VF

= 1 V

Max.

at

Forward

Current

IF

(mA)

15

15

35

35

20

10*

*VF

=

0.45

V

Max.

Reverse

Leakage

Current

IR(nA)atVR(V)

200 50

200 50

100 15

150

16

100

8

100 1

Max.

Capaci-

tance

CT

(pF)

2.0

2.0

1.2

1.2

1.2

1.0

VR

=

OV

f=

1.0 MHz

Note;

Effective

Carrier

Lifetime

(t)

for all

these diodes

is 100 ps

maximum

measured

with

Ki

akauer method

at 5 mA

except

for

5082-2835

which

is

measured

at 20 mA.