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MAXIM
Product Reliability Report
January 2001
This report presents the product reliability data for Maxim's analog products. The data was
acquired from extensive reliability stress testing performed in 1999-2000. It is separated into nine
fabrication processes:
Standard Metal-Gate CMOS (SMG)
Medium-Voltage Metal-Gate CMOS (MV1)
Medium-Voltage Silicon-Gate CMOS (MV2)
3 um Silicon-Gate CMOS (SG3)
5 um Silicon-Gate CMOS (SG5)
1.2 um Silicon-Gate CMOS (SG1.2)
0.8 um Silicon-Gate CMOS (S8)
0.6 um Silicon-Gate CMOS (S6)
Bipolar (BIP) processes
Over 14 million device hours have been accumulated for products stressed at an elevated temperature
(135°C) during this period. Data in this report is typical of Maxim production, and demonstrates the
consistently high reliability of Maxim products.
RR1M
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TABLE OF CONTENTS
INTRODUCTION............................................................................................................................................................................4
FABRICATION PROCESSES ......................................................................................................................................................4
SMG (STANDARD METAL-GATE CMOS) ............................................................................................................................... 4
MV1 (MEDIUM-VOLTAGE METAL-GATE CMOS)................................................................................................................. 4
MV2(MEDIUM-VOLTAGE SILICON-GATE CMOS)................................................................................................................. 4
SG3, SG5, SG1.2, S6, AND S8 (3-MICRON, 5-MICRON, AND 1.2-MICRON, 0.6-MICRORN, AND 0.8-MICRORN
SILICON-GATE CMOS) ............................................................................................................................................................... 4
BIPOLAR(18 AND 12-MICRON)................................................................................................................................................... 4
RELIABILITY METHODOLOGY.................................................................................................................................................4
TABLE 1. MAXIM PROCESS RELIABILITY TESTS ............................................................................................................ 4
TABLE 2. LIFE TEST RESULT OF MAXIM PRODUCTS FOR EACH PROCESS............................................................. 5
RELIABILITY PROGRAM............................................................................................................................................................5
DESIGNED-IN RELIABILITY........................................................................................................................................................ 5
WAFER INSPECTION.................................................................................................................................................................... 6
RELIABILITY DATA......................................................................................................................................................................6
FAILURE-RATE HISTORY ........................................................................................................................................................... 6
TABLE 3. RELIABILITY DATA SUMMARY BY PRODUCT LINE.................................................................................... 6
INFANT MORTALITY EVALUATION......................................................................................................................................... 7
MERITS OF BURN-IN.................................................................................................................................................................... 7
LIFE TEST AT 135°C .................................................................................................................................................................... 8
HUMIDITY TESTS......................................................................................................................................................................... 8
85/85 TEST ..................................................................................................................................................................................... 8
PRESSURE POT TEST .................................................................................................................................................................... 8
HAST TEST ................................................................................................................................................................................... 8
TEMPERATURE CYCLING TEST ................................................................................................................................................. 9
HIGH TEMPERATURE STORAGE TEST ..................................................................................................................................... 9
HYBRID PRODUCTS RELIABILITY DATA.............................................................................................................................9
PROCESS VARIABILITY CONTROL.......................................................................................................................................9
TABLE 4. INFANT MORTALITY EVALUATION RESULTS (BI TEMPERATURE =135 °C) ...................................... 10
TABLE 5. LIFE TEST AT 135 °C/1000 HOURS FOR THE MEDIUM VOLTAGE METAL-GATE CMOS PROCESS
(SMG)........................................................................................................................................................................................... 12
TABLE 6. LIFE TEST AT 135 °C/1000 HOURS FOR THE MEDIUM VOLTAGE METAL-GATE CMOS PROCESS
(MV1)........................................................................................................................................................................................... 12
TABLE 7. LIFE TEST AT 135 °C/1000 HOURS FOR THE 3 UM MEDIUM VOLTAGE SILICON-GATE CMOS
PROCESS (MV2.......................................................................................................................................................................... 13
TABLE 8 LIFE TEST AT 135 °C/1000 HOURS FOR THE 3 UM SILICON-GATE CMOS PROCESS (SG3).................. 14
TABLE 9. LIFE TEST AT 135 ° C/1000 HOURS FOR THE 5 UM SILICON-GATE CMOS PROCESS (SG5) .............. 15
TABLE 10. LIFE TEST AT 135 °C/1000 HOURS FOR THE BIPLAR PROCESS (BIP).................................................... 15
TABLE 11. LIFE TEST AT 135 °C/1000 HOURS FOR THE 1.2 UM SILCON-GATE CMOS PROCESS (SG1.2).......... 16
TABLE 12. LIFE TEST AT 135 °C/1000 HOURS FOR .8UM SILICON-GATE CMOS PROCESS (S8).......................... 17
TABLE 13. LIFE TEST AT 135 °C/1000 HOURS FOR THE 0.6 UM SILICON-GATE CMOS PROCESS (S6).............. 17
TABLE 14. 85 °C/85 % R.H./BIASED/1000 HOURS TEST RESULTS (ALL PLASTIC PACKAGES)........................... 18
TABLE 15. PRESSURE POT TEST AT 121 °C/100 % R.H. 15 PSIG/168 HOURS (ALL PLASTIC PACKAGES) ........ 18
TABLE 16. HAST TEST RESULTS 130 ° C/85% R.H./BIASED/100 HOURS ................................................................... 23
TABLE 17. TEMPERATURE CYCLING TEST -65 ° C TO +150 °C/1000 CYCLES (ALL PLASTIC PACKAGES)