D25XB20 ~ D25XB60
SILICON BRIDGE RECTIFIERS
PRV : 200 - 600 Volts
Io : 25 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Very good heat dissipation
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
D25XB20 D25XB60 UNIT
Maximum Recurrent Peak Reverse Voltage
V
RRM
200 600 V
Maximum RMS Voltage
V
RMS
140 420 V
Maximum DC Blocking Voltage
V
DC
200 600 V
Maximum Average Forward Current A
50 Hz sine wave, R-load
Peak Forward Surge Current, 50Hz sine wave
Non-repetitive 1 cycle peak value, Tj = 25 °C
Current Squared Time at t < 8.3 ms.
I
2
t
300
A
2
S
Maximum Forward Voltage per Diode at IF = 12.5 A
V
F
1.05 V
Maximum DC Reverse Current Ta = 25 °C
I
R
10
µA
at Rated DC Blocking Voltage Ta = 100 °C
I
R(H)
200
µA
Typical Thermal Resistance (Note 1)
R
θJC
1.0
°C/W
Operating Junction Temperature Range
T
J
- 40 to + 150
°C
Storage Temperature Range
T
STG
- 40 to + 150
°C
Note :
1. Thermal resistance from junction to case, With heat sink.
Page 1 of 2 Rev. 02 : March 25, 2005
RATING
I
FSM
350 A
25 (With heatsink, Tc = 98°C)
3.5 (Without heatsink, Ta = 25°C)
I
F(AV)
RBV25
Dimensions in millimeters
C3
4.9 ± 0.2
3.9 ± 0.2
~
∅ 3.2 ± 0.1
~
11
±
0.2
17.5
±
0.5
20
±
0.3
0.7 ± 0.1
1.0 ± 0.1
2.0 ± 0.2
30 ± 0.3
7.5
±0.2
10
±0.2
+
7.5
±0.2
13.5
±
0.3
* Pb / RoHS Free
IATF 0113686
SGS TH07/1033
TH09/2479
TH97/2478
www.e icsemi.com
RATING AND CHARACTERISTIC CURVES ( D25XB20 ~ D25XB60 )
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE PER DIODE
FORWARD VOLTAGE, VOLTS
Page 2 of 2 Rev. 02 : March 25, 2005
15
10
5
30
25
100
10
1.0
400
0
600
0
300
200
100
0.1
10
80
0.01
0.01
1.0
0.1
10
0
140
0
20
40 60
12
0
PERCENT OF RATED
REVERSE VOLTAGE, (%)
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
FORWARD CURRENT, AMPERES
REVERSE CURRENT,
MICROAMPERES
Tc = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
T
J
= 50
°
C
TJ = 100 °C
T
J
= 25
°
C
20
500
10
20
60
1
2
4
6
40
10
1.2
1.4
1.8
0.4
0.6
0.8
1.0
1.6
With heatsink
IATF 0113686
SGS TH07/1033
TH09/2479
TH97/2478
www.e icsemi.com