HIGH SPEED SWITCHING DIODE
* Silicon Epitaxial Planar Diode
* High reliability
* Low reverse current
* Low forward voltage drop
* High speed switching
* Pb / RoHS Free
* Case : DO-35 Glass Case
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.13 gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C ambient temperature unless otherwise specified
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL VALUE UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
70 V
Maximum Reverse Voltage
VR
60 V
Maximum Average Forward Current
IF(AV)
150 mA
Maximum Non-Repetitive Peak Forward Current (t < 1s)
IFSM
1.0 A
Maximum Power Dissipation , Ta = 25 °C
PD
mW
Maximum Forward Voltage at IF = 10 mA VF
0.8 V
Maximum Reverse Current
at VR = 30V IR
100 nA
Maximum Reverse Recovery Time
(IF = 10mA, VR = 6V , RL = 50Ω)
Maximum Capacitance Between Lead
(VR = 1 V, f = 1MHz)
Junction Temperature Range
TJ
175
°C
Storage Temperature Range
TSTG
- 65 to + 175
°C
Page 1 of 2 Rev. 02 : March 25, 2005
ns
pF
RATING
250
C 3.0
Trr 4.0
0.079(2.0 )max.
0.150 (3.8)
max.
0.020 (0.52)max.
Dimensions in inches and ( millimeters )
1.00 (25.4)
min.
1.00 (25.4)
min.