RB150 - RB158
SILICON BRIDGE RECTIFIERS
PRV : 50 - 800 Volts
Io : 1.5 Amperes
FEATURES :
* High surge c ur r ent capability
* High reliability
* Low reverse current
* Low for ward voltage dr op
* Rated isolat ion-voltage 2000 V
AC
* Ideal for printed c irc uit boar d
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V - 0 r ate flame r etardant
* Ter minals : P lated lead solder able per
MI L- S TD-202, M ethod 208 guaranteed
* Polarity : Polarity symbols m arked on case
* Mount ing posit ion : A ny
* Weight : 3. 4 gr ams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratin
g
a t 25
°
C ambient tem
p
erature unless otherwise s
p
ecified.
Single phase, half wave , 60 Hz, resistive or inductive lo ad.
For capacitive load, derate current by 20%.
SYMBOL RB150 RB151 RB152 RB154 RB156 RB158 UNIT
Maxi mum Recurrent Peak Reverse Voltage V
RRM
50 100 200 400 600 800 V
Maximum RMS Voltage V
RMS
35 70 140 280 420 560 V
Maxi mum DC Blocking Vol t age V
DC
50 100 200 400 600 800 V
Maxim um Average Forward Current Tc = 50 °C
I
F(AV)
1.5 A
Peak For war d Surge Current, Singl e half si ne wave
Super imposed on rat ed load (JEDEC Met hod)
Maxim um For war d Vol t age per Diode at I
F
= 1 A V
F
0.95 V
Maximum DC Reverse Current Ta = 25 °C
I
R
10
μA
at Rated DC Blocking Volt age Ta = 100 °C
I
R(H)
100
μA
Typical Thermal Resistance (Note 1)
R
θ
JL
15
°C/W
Operati ng Junct ion Temperature Range T
J
- 40 t o + 140
°C
Storage Temperat ur e Range T
STG
- 40 t o + 140
°C
Notes :
1 ) Thermal resista nce from Junction to le ad mounted on P.C. Board with 0.47 " X 0.47" ( 12m m X 1 2 m m ) Cu pads.
Page 1 of 2 Rev. 03 : May 6, 2013
RATING
I
FSM
40 A
RB
0.105 (2.66)
0.085 (2.16)
+
AC AC
0.71 (18.0)
0.63 (16.0)
0.276 (7.01)
0.236 (5.99)
0.16 (4.00)
0.14 (3.55)
0.035 (0.89)
0.028 (0.71)
0.500 (12.7)
MIN.
Dim e ns ions in inc he s and ( millim e te r )
0.825 (20.95)
0.605 (15.36)
IATF 0113686
SGS TH07/1033
TH09/2479
TH97/2478
www.e icsemi.com
RATING AND CHARACTERIST IC CURVES ( RB150 - RB158 )
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
0 20 40 60 80 100 120 140 1 2 4 6 10 20 40 60 100
CASE TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
0.6 0 .7 0.8 0.9 1.0 1.1 1.2 1.3
FORWARD VOLTAGE, VOLTS
Page 2 of 2 Rev. 03 : May 6, 2013
1.5
1.0
0.5
2.0
10 10
1.0
30
0
40
0
20
10
0.01
1.0
0.01
0.1
0.1
PEAK FORWARD SURGE
CURRENT, AMPERE S
AVERAGE FORWARD OUTPUT
CURRENT, AMPERE S
FORWARD CURRENT, AMPERES
80 100 1400
20
40 60 120
PERCENT OF RATED REVERSE
VOLTAG E, (%)
REVERSE CURRENT, MICRO AMPERES
TJ = 25 °C
TJ = 100 °C
TJ = 25 °C
25
15
5
35
P.C. Board Mounted with
0.47" X 0.47" ( 12mm X 12mm )
Cu. pads.
IATF 0113686
SGS TH07/1033
TH09/2479
TH97/2478
www.e icsemi.com