,
O
ne,
TIP31,
TIP31A,
TIP31B,
TIP31C,
(NPN),
TIP32,
TIP32A,
TIP32B,
TIP32C,
(PNP)
TELEPHONE:
(973)
376-2922
(212)227-6005
FAX: (973)
376-8960
Complementary
Silicon
Plastic
Power Transistors
Designed
for use in
general
purpose
amplifier
and
switching
applications.
Features
•
Col
lector-Emitter
Saturation
Voltage-
VcE(sat)
=
1-2
Vdc
(Max)
@
Ic
= 3.0 Adc
•
Collector-Emitter
Sustaining
Voltage
-
VCEO(SUS)
=
40 Vdc
(Min)
-
T1P31,
TIP32
=
60 Vdc
(Min)
-
TIP31
A,
T1P32A
=
80 Vdc
(Min)
-
TIP31B,
TIP32B
= 100
Vdc(Min)-TIP31C,
TIP32C
•
High
Current
Gain
-
Bandwidth
Product
fT
=3.0
MHz
(Min)
@
Ic
= 500
mAdc
•
Compact
TO-220
AB
Package
•
Pb-Free
Packages
are
Available*
MAXIMUM
RATINGS
Rating
Collector
-
Emitter Voltage
TIP31
,
TIP32
TIP31A,
TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
Collector-Base Voltage
TIP31
,
TIP32
TIP31A,
TIP32A
TIP31B,
TIP32B
TIP31C, TIP32C
Emitter-Base Voltage
Collector
Current Continuous
Peak
Base
Current
Total
Power Dissipation
@TC
=
25'C
Derate above
25° C
Total
Power Dissipation
@TA
=
25°C
Derate above
25°C
Undamped Inductive Load Energy (Note
1
)
Operating
and
Storage Junction
Temperature
Range
Symbol
VCEO
VCB
VEB
Ic
IB
PD
PD
E
Tj.
Tstg
Value
40
60
80
100
40
60
80
100
5.0
3.0
5.0
1.0
40
0.32
2.0
0.016
32
-65to
+
150
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
W
W/°C
mJ
°C
3
AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
40-60-80-100
VOLTS,
40
WATTS
MARKING
DIAGRAM
TO-220AB
O
TIPSxxG
AYWW
Maximum ratings
are
those values beyond which device damage
can
occur.
Maximum
ratings applied
to the
device
are
individual stress limit values (not
normal operating conditions)
and are not
valid simultaneously.
If
these limits
are
exceeded,
device functional operation
is not
implied, damage
may
occur
and
reliability
may be
affected.
1.
lc
= 1.8 A, L =
20mH,
P.R.F.
= 10 Hz,
Vcc
=
10V,
RBE
= 100
Q
NJ
Semi-Conductors
reserves
the
right
to
change
test
conditions,
parameter
limits
and
package
dimensions without
notice.
Information furnished
by NJ
Semi-Conductors
is
believed
to.be
both
accurate
and
reliable
at the
time
of
going
to
press.
However,
NJ
Semi-Conductors
assumes
no
responsibility
for any
errors
or
omissions
discovered
in its
use.
NJ
Semi-Conductors
encourages
customers
to
verify
that
datasheets
are
current before placing
orders.
Quality
Semi-Conductors
TIP31,
TIP31A,
TIP31B,
TIP31C,
(NPN),
TIP32,
TIP32A,
TIP32B,
TIP32C,
(PNP)
THERMAL
CHARACTERISTICS
Characteristic
Thermal
Resistance,
Junction-to-Ambient
Thermal Resistance,
Junction-to-
Case
Symbol
RBJA
RBJC
Max
62.5
3.125
Unit
°C/W
°c/w
ELECTRICAL
CHARACTERISTICS
(Tc
=
25°C
unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF
CHARACTERISTICS
Collector-Emitter
Sustaining Voltage (Note
2)
TIP31
,
TIP32
(lc
= 30
mAdc,
IB
= 0)
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
Collector Cutoff Current
(VCE
= 30
Vdc,
IB
= 0)
TIP31,
TIP32,
TIP31A,
TIP32A
(VCE
= 60
Vdc,
IB = 0)
TIP31
B,
TIP31C,
TIP32B,
TIP32C
Collector Cutoff Current
(VCE
= 40
Vdc,
VEB
= 0)
TIP31, TIP32
(VCE
= 60
Vdc,
VEB
= 0)
TIP31A,
TIP32A
(VCE
= 80
Vdc,
VEB
= 0)
TIP31
B,
TIP32B
(VCE
= 100
Vdc,
VEB
=
0)
TIP31C, TIP32C
Emitter Cutoff Current
(VBE
= 5.0
Vdc,
IQ
= 0)
vCEO(sus)
ICEO
!CES
'EBO
40
60
80
100
~
-
-
-
0.3
0.3
200
200
200
200
1.0
Vdc
mAdc
nAdc
mAdc
ON
CHARACTERISTICS (Note
2)
DC
Current Gain
(lc
=
1
.0
Adc,
VCE
= 4.0
Vdc)
(lc
= 3.0
Adc,
VCE
= 4.0
Vdc)
Collector-Emitter
Saturation Voltage
(lc
= 3.0
Adc,
IB
= 375
mAdc)
Base-Emitter
On
Voltage
(lc
= 3.0
Adc,
VCE
= 4.0
Vdc)
HFE
VCE(sat)
VBE(on)
25
10
-
-
50
1.2
1.8
-
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain
-
Bandwidth Product
(lc
= 500
mAdc,
VCE
= 10
Vdc,
ftest
= 1.0
MHz)
Small-Signal
Current Gain
(lc
=
0.5
Adc,
VCE
=
10
Vdc,
f = 1.0
kHz)
fT
hfe
3.0
20
-
-
MHz
-
2.
Pulse Test: Pulse Width
s
300 us,
Duty Cycle
<
2.0%.