Revision: December, 2012 www.wontop.com
Material Composition Declaration
Package Information
Package Package Weight (mg) Terminal Finish MSL Rating
SOT-323 6 Matte Tin (Sn) 1
Produc
t Group
Type No. Description
MMBD352W Diode Schottky 10mA 7V
RB706F-40, RB715F, RB717F Diode Schottky 30mA 40V
BAS70W / AW / CW / SW Diode Schottky 70mA 70V
1SS372 Diode Schottky 100mA 10V
MMBD717W / AW / CW / SW Diode Schottky 200mA 20V
BAT54W / AW / CW / SW Diode Schottky 200mA 30V
MMBD330 Diode Schottky 200mA 30V
BAS40W / AW / CW / SW Diode Schottky 200mA 40V
MMBD770 Diode Schottky 200mA 70V
1SS401 Diode Schottky 300mA 20V
RB461F Diode Schottky 700mA 20V
DA204U Diode Switching 100mA 20V
M1MA141K, M1MA141WA, M1MA141WK Diode Switching 100mA 40V
DAN202U, DAN217U, DAP202U Diode Switching 100mA 80V
M1MA142K, M1MA142WA, M1MA142WK Diode Switching 100mA 80V
BAL99W, BAV70W, BAW56W Diode Switching 200mA 75V
BAS16W, MMBD4148W Diode Switching 200mA 100V
BAS19W – BAS21W Diode Switching 200mA 120V – 250V
BAV99W Diode Switching 215mA 70V
MMBD4448W Diode Switching 250mA 75V
BZX84C2V4W – BZX84VC51W Diode Zener 200mW
MMBZ5221BW – MMB5262BW Diode Zener 200mW
Component Material Substance CAS No.
Material
Mass
(%)
Material
Mass
(mg)
Component
Mass
(%)
Component
Mass
(mg)
PPM
Die Doped Silicon* Si 7440-21-3 100.00 0.100 1.67 0.100 16667
Wire Bond Gold Au 7440-57-5 100.00 0.010 0.17 0.010 1667
Fe 7439-89-6 56.40 1.188 198058
Ni 7440-02-0 42.00 0.885 147490
Mn 7439-96-5 0.80 0.017 2809
Co 7440-48-4 0.50 0.011 1756
Leadframe Ferrous Alloy
Si 7440-21-3
0.30 0.006
35.11 2.107
1054
Ag 7440-22-4 80.00 0.046 7600
Bisphenol F 28064-14-4 15.00 0.009 1425
Die Bond Silver Silicone
Glycidyl
neodeconate
26761-45-5 5.00
0.003
0.95 0.057
475
Plating Matte Tin Sn 7440-31-5 100.00 0.110 1.83 0.110 18333
Silica 7631-86-9 79.00 2.857 476107
Epoxy Resin 29690-82-2 20.00 0.723 120533
Encapsulation EMC
Carbon Black 1333-86-4 1.00 0.036
60.27 3.616
6027
Tolerance ±10%
*Dopant and metallization of the silicon die are not reported in this statement where their concentration is less than the minimum report
able
level per EIA JIG-101.
WON-TOP ELECTRONICS
®
Revision: December, 2012 www.wontop.com
Data disclosed herewith is approximate and is based on information from suppliers surveys, Material Safety Datasheet, engineering
calculations and measurements. Won-Top Electronics(WTE) has checked all information carefully and believes it to be correct and accurate.
However, WTE cannot assume any responsibility for inaccuracies. WTE reserves the right to change any or all information herein without
further notice.
RoHS Declaration
The European Parliament and of the Council on the Restriction of the use of Certain Hazardous Substances in Electrical and Electronics
Equipment (RoHS) directive restricts the concentration of Lead (Pb), Mercury (Hg), Hexavalent Chromium (Cr6+), P olybrominated Biphenyls
(PBB), Polybrominated Diphenyl Ethers (PBD) to 0.1%(1000 PPM) and restricts the concentration of Cadmium (Cd) to 0.01%(100 PPM) in
homogeneous materials of electronics products.
The product group listed above and the homogenous materials are compliant with the Directive 2011/65/EU. WTE warrants that all its packing,
components and/or products supplied to the Customer and/or its affiliated companies or designated contractors do not contain these
hazardous substances in quantity levels higher than or equal to the thresholds to this directive.
Exemptions as declared for the directive are:
7(a) Lead in high melting temperature type solders (i.e. lead-based alloys containing 85% by weight or more lead).
7(c)-I Lead in glass (applicable for glass passivated silicon die).