Revision: December, 2012 www.wontop.com
Material Composition Declaration
Package Information
Package Package Weight (mg) Terminal Finish MSL Rating
SOT-23 8 Matte Tin (Sn) 1
Produc
t Group
Type No. Description
MMBD352 – MMBD355 Diode Schottky 10mA 7V
BAS70 / A / C / S Diode Schottky 70mA 70V
DAN217, DAP202, DAN202 Diode Schottky 100mA 80V
MMBD101 Diode Schottky 200mA 7V
MMBD717 / A / C / S Diode Schottky 200mA 20V
BAT54 / A / C / S Diode Schottky 200mA 30V
MMBD301 Diode Schottky 200mA 30V
BAS40 / A / C / S Diode Schottky 200mA 40V
MMBD701 Diode Schottky 200mA 70V
1SS344 Diode Schottky 500mA 20V
RB491D Diode Schottky 1000mA 20V
MMBD2835, MMBD2837 Diode Switching 100mA 30V
MMBD2836, MMBD2838 Diode Switching 100mA 50V
1SS181, 1SS184, 1SS187, 1SS190, 1SS193, 1SS196, 1SS226 Diode Switching 100mA 80V
BAV74 Diode Switching 200mA 50V
MMBD6050, MMBD6100 Diode Switching 200mA 70V
BAL99, BAV70, BAW56 Diode Switching 200mA 75V
DAN202, DAN217, DAP202 Diode Switching 200mA 100V
MMBD914, MMBD4148, MMBD7000 Diode Switching 200mA 100V
MMBD4148A – MMBD4148SE Diode Switching 200mA 100V
BAS19 – BAS21 Diode Switching 200mA 120 – 250V
MMBD1501A – MMBD1505A Diode Switching 200mA 200V
BAS21A / C / S Diode Switching 200mA 250V
BAV99 Diode Switching 215mA 75V
BAS116, BAV170, BAV199 Diode Switching 215mA 85V
MMBD4448 Diode Switching 250mA 75V
BZX84B2V4 – BZX84B51 Diode Zener 350mW
BZX84C2V4 – BZX84C51 Diode Zener 350mW
BZX84C2V4CC – BZX84C75CC Diode Zener 350mW
MMBZ5221B – MMB5262B Diode Zener 350mW
Component Material Substance CAS No.
Material
Mass
(%)
Material
Mass
(mg)
Component
Mass
(%)
Component
Mass
(mg)
PPM
Die Doped Silicon* Si 7440-21-3 100.00 0.158 1.97 0.158 19750
Wire Bond Gold Au 7440-57-5 100.00 0.010 0.12 0.010 1250
Fe 7439-89-6 56.40 1.229 153620
Ni 7440-02-0 42.00 0.915 114398
Mn 7439-96-5 0.80 0.017 2179
Co 7440-48-4 0.50 0.011 1362
Leadframe Ferrous Alloy
Si 7440-21-3
0.30 0.007
27.24 2.179
817
Ag 7440-22-4 80.00 0.061 7600
Bisphenol F 28064-14-4 15.00 0.011 1425
Die Bond Silver Silicone
Glycidyl
neodeconate
26761-45-5 5.00
0.004
0.95 0.076
475
Plating Matte Tin Sn 7440-31-5 100.00 0.190 2.37 0.190 23750
Silica 7631-86-9 79.00 4.256 531966
Epoxy Resin 29690-82-2 20.00 1.077 134675
Encapsulation EMC
Carbon Black 1333-86-4 1.00 0.054
67.35 5.387
6734
WON-TOP ELECTRONICS
®
Revision: December, 2012 www.wontop.com
Tolerance ±10%
*Dopant and metallization of the silicon die are not reported in this statement where their concentration is less than the minimum reportable
level per EIA JIG-101.
Data disclosed herewith is approximate and is based on information from suppliers surveys, Material Safety Datasheet, engineering
calculations and measurements. Won-Top Electronics(WTE) has checked all information carefully and believes it to be correct and accurate.
However, WTE cannot assume any responsibility for inaccuracies. WTE reserves the right to change any or all information herein without
further notice.
RoHS Declaration
The European Parliament and of the Council on the Restriction of the use of Certain Hazardous Substances in Electrical and Electronics
Equipment (RoHS) directive restricts the concentration of Lead (Pb), Mercury (Hg), Hexavalent Chromium (Cr6+), P olybrominated Biphenyls
(PBB), Polybrominated Diphenyl Ethers (PBD) to 0.1%(1000 PPM) and restricts the concentration of Cadmium (Cd) to 0.01%(100 PPM) in
homogeneous materials of electronics products.
The product group listed above and the homogenous materials are compliant with the Directive 2011/65/EU. WTE warrants that all its packing,
components and/or products supplied to the Customer and/or its affiliated companies or designated contractors do not contain these
hazardous substances in quantity levels higher than or equal to the thresholds to this directive.
Exemptions as declared for the directive are:
7(a) Lead in high melting temperature type solders (i.e. lead-based alloys containing 85% by weight or more lead).
7(c)-I Lead in glass (applicable for glass passivated silicon die).