MMDT5451 Multi-Chip General Purpose TRANSISTOR
● Power dissipation PCM : 200 mW (Tamb=25°C)
● Collector current ICM : ±200 mA
● Collector-base voltage V(BR)CBO : 180/-160 V
● Operating and storage junction temperature range TJ, Tstg: -55°C to +150°C
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Datasheet |
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Please see the document for details |
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SOT-363 |
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English Chinese Chinese and English Japanese |
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2007/11/16 |
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77 KB |
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