SSPL5505

2022-09-30

◆Description:
■These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
◆Features and Benefits:
■Advanced Process Technology
■Special designed for PWM, load switching and general purpose applications
■Ultra low on-resistance with low gate charge
■Fast switching and reverse body recovery
■175°C operating temperature

SILIKRON

SSPL5505

More

Part#

N-Channel enhancement mode power field effect transistors

More

More

Datasheet

More

More

Please see the document for details

More

More

TO220

English Chinese Chinese and English Japanese

2011.11.20

Version : 1.1

820 KB

- The full preview is over. If you want to read the whole 8 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: